Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings

Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings

May 27, 2020

Nijmegen -- AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes

Nexperia, the expert in essential semiconductors, has announced a range of new silicon germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages that combine the high efficiency of their Schottky counterparts with the thermal stability of fast recovery diodes.

Targeting automotive, communications infrastructure and server markets, the new 1-3 A SiGe rectifiers are of particular benefit in high-temperature applications like LED lighting, engine control units or fuel injection. Design engineers using the new, extremely low leakage devices can now rely on an extended safe-operating area with no thermal runaway up to 175 degrees. At the same time, they can optimize their design for higher efficiency which is not feasible using fast recovery diodes commonly used in such high-temperature designs. By boosting a low forward voltage (Vf) and low Qrr, the SiGe rectifiers have an advantage of 10-20 % lower conduction losses.

The PMEG SiGe devices (PMEGxGxELR/P) are housed in size- and thermally-efficient CFP3 and CFP5 packages that have become the industry standard for power diodes. By featuring a solid copper clip the packages’ thermal resistance is reduced and transfer of heat into the ambient environment is optimized, allowing small and compact PCB designs. Moreover, simple pin-to-pin replacements of Schottky and fast recovery diodes are possible when switching to SiGe technology.

Jan Fischer, Nexperia product manager commented: “Utilising Nexperia’s innovative Silicon Germanium technology gives engineers unprecedented options to design their power circuitry and finally build market-leading products. SiGe perfectly complements Nexperia’s power diodes offering which includes more than 100 Schottky and fast recovery rectifiers in the clip-bonded FlatPower (CFP) package. And, we continue to grow this portfolio to always offer our customers a part which is the ideal fit for their application."

The first four AEC-Q101-qualified 120 V SiGe rectifiers are already in mass production. A further eight 150 V and 200 V devices are sampling now. For more information on Nexperia's SiGe rectifiers, including product specs and datasheets, visit www.nexperia.com/sige-rectifiers or contact your local Nexperia representative.

About Nexperia

Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, Netherlands, Nexperia annually ships more than 90 billion products, each meeting the stringent standards set by the Automotive industry. These products are recognized as benchmarks in efficiency – in process, size, power and performance — with industry-leading small packages that save valuable energy and space.

With decades of experience in supplying to the world’s leading companies, Nexperia has over 12,000 employees across Asia, Europe and the US. Nexperia, a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and OHSAS 18001.

Nexperia: Efficiency wins.

For press information, please contact:

Nexperia Agency: BWW Communications

Petra Beekmans, Head of Communications & Branding
Phone: +31 6 137 111 41
Email: petra.beekmans@nexperia.com
 

Nick Foot, director
+44-1491-636393
Nick.foot@bwwcomms.com