Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

CCPAK1212 MOSFETs

Nexperia’s groundbreaking JEDEC-standard copper-clip CCPAK1212 packaging, designed to push the limits of performance and efficiency. The CCPAK1212 series features a 12 mm × 12 mm footprint with two cooling options: bottom-side cooled CCPAK1212 and the inverted, top-side cooled CCPAK1212i. These packages allow devices to achieve exceptional performance while minimizing solution size. This innovative packaging demonstrates Nexperia’s industry leadership in the field of surface mount device (SMD) technology and how packaging innovation can bring significant advantages to various power electronics applications.

Features and Benefits

CCPAK MOSFETs are designed to meet the high-power demands of next-generation industrial applications:

  • Top-side & bottom-side cooling options for increased thermal extraction
  • Low inductance
  • Low RDS(on) 
  • Low thermal resistance 
  • High Current density
  • High performance silicon
  • Outstanding board level reliability        

Featured products

NextPower 80/100 V

NextPower 80/100 V

For high efficiency switching and high reliability applications
ASFETs for Hotswap and Soft Start

ASFETs for Hotswap and Soft Start

Reliable linear mode, enhanced SOA and low RDS(on)

Latest news and blogs

  • Blog article
Jun 26, 2020

CCPAK: copper clip comes to high voltage applications

Latest videos

CCPAK1212: a new era for power semiconductor packaging

CCPAK1212: a new era for power semiconductor packaging
What is CCPAK? (Surface-mount packaging for high-power FETs) ...

Products

MOSFETs

Type number Description Status Quick access
PSMN1R4-100ASE N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80ASE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R4-100CSE N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80CSE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Qualification
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMNR90-80ASE N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R0-100ASF NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R4-100CSF NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R1-80ASF NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R1-80CSF NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMNR90-80CSF NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMNR90-80ASF NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package Production

Documentation

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