Bipolar transistors

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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

CCPAK1212 MOSFETs

Nexperia’s JEDEC-standard copper-clip CCPAK1212 MOSFET packaging pushes the limits of performance and efficiency. With a compact 12 mm × 12 mm footprint, it offers two cooling options: bottom-side cooled CCPAK1212 and inverted, top-side cooled CCPAK1212i. These packages deliver up to 1.5 kW power ratings, low electrical and thermal resistance, high current density, and best-in-class SOA performance, ensuring superior reliability and efficiency for the high-power demands of next-generation industrial applications.

Features and Benefits

CCPAK MOSFETs are designed to meet the high-power demands of next-generation industrial applications:

  • High power rating (1.5 kW) in a compact 12 x 12mm package.
  • Ultra-low RDS(on) for low I2R conduction losses.
  • Best-in-class linear mode (SOA), in-rush & surge protection.
  • Copper-clip technology gives low electrical & thermal resistance. 
  • High performance silicon.
  • Outstanding board level reliability.

 

Applications

  • High-power BLDC motor control
  • High-power conversion (DC/DC & AC/DC)
  • Battery management & protection
  • Residential / commercial heat pump
  • Renewable energy storage
  • Hotswap for communication infrastructure
  • Battery management systems
  • Renewable energy

Top-side and bottom-side cooling

The CCPAK1212 series features a 12 mm × 12 mm footprint with bottom-side cooled CCPAK1212 and top-side cooled CCPAK1212i options, providing design flexibility, improved thermal management, and high performance in a compact size.

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CCPAK1212 MOSFETs
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Products

MOSFETs

Type number Description Status Quick access
PSMN1R4-100ASE N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80ASE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R2-80CSE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Qualification
PSMN1R4-100CSE N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMNR90-80ASE N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-100ASF NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R4-100CSF NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R1-80ASF NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMNR90-80CSF NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package Production
PSMNR90-80ASF NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package Production
PSMN1R1-80CSF NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package Production

Documentation

File name Title Type Date
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11156.pdf Using Power MOSFET Zth Curves Application note 2021-01-04
AN11261.pdf RC Thermal Models Application note 2021-03-18
AN50005.pdf Paralleling power MOSFETs in high power applications Application note 2021-09-13
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
RS6121_CCPAK1212i_MOSFETs.png - Marcom graphics 2024-11-15

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