Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
---|---|---|---|---|
74AUP2G00DC | 74AUP2G00DC,125 | 935280706125 | SOT765-1 | Order product |
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Click here for more informationLow-power dual 2-input NAND gate
The 74AUP2G00 provides dual 2-input NAND function.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Type number | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|
74AUP2G00DC | 0.8 - 3.6 | CMOS | ± 1.9 | 8.3 | 70 | 2 | ultra low | -40~125 | VSSOP8 |
Model Name | Description |
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|
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
74AUP2G00DC | 74AUP2G00DC,125 (935280706125) |
Active | p00 |
VSSOP8 (SOT765-1) |
SOT765-1 | SOT765-1_125 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
74AUP2G00DC | 74AUP2G00DC,125 | 74AUP2G00DC |
File name | Title | Type | Date |
---|---|---|---|
74AUP2G00 | Low-power dual 2-input NAND gate | Data sheet | 2024-08-12 |
AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT765-1 | 3D model for products with SOT765-1 package | Design support | 2020-01-22 |
aup2g00 | aup2g00 IBIS model | IBIS model | 2013-04-07 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
VSSOP8_SOT765-1_mk | plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT765-1 | plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body | Package information | 2022-06-03 |
SOT765-1_125 | VSSOP8; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
74AUP2G00DC_Nexperia_Product_Reliability | 74AUP2G00DC Nexperia Product Reliability | Quality document | 2024-06-16 |
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Model Name | Description |
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|
Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
---|---|---|---|---|---|---|
74AUP2G00DC | 74AUP2G00DC,125 | 935280706125 | Active | SOT765-1_125 | 3,000 | Order product |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.