Bipolar transistors

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ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

74AXP1G10GM

Low-power 3-input NAND gate

The 74AXP1G10 is a single 3-input NAND gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been discontinued

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V
  • Low input capacitance; CI = 0.5 pF (typical)
  • Low output capacitance; CO = 1.0 pF (typical)
  • Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2 V (typical)
  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)
  • High noise immunity
  • Complies with JEDEC standard:
    • JESD8-12A.01 (1.1 V to 1.3 V)
    • JESD8-11A.01 (1.4 V to 1.6 V)
    • JESD8-7A (1.65 V to 1.95 V)
    • JESD8-5A.01 (2.3 V to 2.7 V)
  • ESD protection:
    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
    • CDM JESD22-C101E exceeds 1000 V
  • Latch-up performance exceeds 100 mA per JESD 78 Class II
  • Inputs accept voltages up to 2.75 V
  • Low noise overshoot and undershoot < 10 % of VCC
  • IOFF circuitry provides partial Power-down mode operation
  • Multiple package options
  • Specified from -40 °C to +85 °C

Parametrics

Type number VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C)
74AXP1G10GM 0.7 - 2.75 CMOS ± 4.5 2.6 70 1 ultra low -40~85

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74AXP1G10GM 74AXP1G10GMH
(935306305125)		 Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74AXP1G10GM 74AXP1G10GMH 74AXP1G10GM rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (4)

File name Title Type Date
74AXP1G10 Low-power 3-input NAND gate Data sheet 2017-03-30
axp1g10 74AXP1G10 IBIS model IBIS model 2015-10-12
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
74AXP1G10GM_Nexperia_Product_Reliability 74AXP1G10GM Nexperia Product Reliability Quality document 2022-05-04

Support

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Models

File name Title Type Date
axp1g10 74AXP1G10 IBIS model IBIS model 2015-10-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet