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Click here for more information74AXP1G10GM
Low-power 3-input NAND gate
The 74AXP1G10 is a single 3-input NAND gate.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Features and benefits
- Wide supply voltage range from 0.7 V to 2.75 V
- Low input capacitance; CI = 0.5 pF (typical)
- Low output capacitance; CO = 1.0 pF (typical)
- Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2 V (typical)
- Low static power consumption; ICC = 0.6 μA (85 °C maximum)
- High noise immunity
- Complies with JEDEC standard:
- JESD8-12A.01 (1.1 V to 1.3 V)
- JESD8-11A.01 (1.4 V to 1.6 V)
- JESD8-7A (1.65 V to 1.95 V)
- JESD8-5A.01 (2.3 V to 2.7 V)
- ESD protection:
- HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
- CDM JESD22-C101E exceeds 1000 V
- Latch-up performance exceeds 100 mA per JESD 78 Class II
- Inputs accept voltages up to 2.75 V
- Low noise overshoot and undershoot < 10 % of VCC
- IOFF circuitry provides partial Power-down mode operation
- Multiple package options
- Specified from -40 °C to +85 °C
Parametrics
| Type number | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) |
|---|---|---|---|---|---|---|---|---|
| 74AXP1G10GM | 0.7 - 2.75 | CMOS | ± 4.5 | 2.6 | 70 | 1 | ultra low | -40~85 |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| 74AXP1G10GM | 74AXP1G10GMH (935306305125) |
Obsolete | no package information | ||||
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| 74AXP1G10GM | 74AXP1G10GMH | 74AXP1G10GM |
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Series
Documentation (4)
| File name | Title | Type | Date |
|---|---|---|---|
| 74AXP1G10 | Low-power 3-input NAND gate | Data sheet | 2017-03-30 |
| axp1g10 | 74AXP1G10 IBIS model | IBIS model | 2015-10-12 |
| Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 | AXP – Extremely low-power logic technology portfolio | Leaflet | 2019-04-05 |
| 74AXP1G10GM_Nexperia_Product_Reliability | 74AXP1G10GM Nexperia Product Reliability | Quality document | 2022-05-04 |
Support
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Models
| File name | Title | Type | Date |
|---|---|---|---|
| axp1g10 | 74AXP1G10 IBIS model | IBIS model | 2015-10-12 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.