Bipolar transistors

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ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

Low VCEsat (BISS) transistors double

To achieve design bliss, use our double BISS

If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices make the perfect solution. They are highly energy efficient and have a high collector current capability (due to an innovative mesh-emitter technology).

Key features and benefits

  • High performance in reduced board space
  • High collector current gain hFE at high IC
  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat (down to <30 mΩ)
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
  • High collector current capability IC and ICM

Key applications

  • Power switch for LAN and ADSL systems / medium power DC-to-DC conversion
  • Inverter applications e.g. TFT displays
  • Medium power peripheral drivers e.g. fan, motor
  • Battery chargers / loadswitches
  • Strobe flash units for digital still cameras and mobile phones

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Low VCEsat (BISS) transistors double
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Products

Type number Description Status Quick access
PBSS2515YPN-Q 15 V low VCEsat NPN/PNP transistor Production
PBSS4112PAN-Q 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4112PANP-Q 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat transistor Production
PBSS4130PAN-Q 30 V, 1 A NPN/NPN low VCEsat transistor Production
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4140DPN-Q 40 V low VCEsat NPN/PNP transistor Production
PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160DS-Q 60 V, 1 A NPN/NPN low VCEsat transistor Production
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANP-Q 60 V, 1 A NPN/PNP low VCEsat transistor Production
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4220PANS 20 V, 2 A NPN/NPN low VCEsat BISS double transistor Production
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Production
PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Production
PBSS4260PANS-Q 60 V, 2 A NPN/NPN low VCEsat double transistor Production
PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor EndOfLife
PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor EndOfLife
PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor EndOfLife
PBSS5130PAP-Q 30 V, 1 A PNP/PNP low VCEsat transistor Production
PBSS5160DS-Q 60 V, 1 A PNP/PNP low VCEsat transistor Production
PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5220PAPS-Q 20V, 2 A PNP/PNP low VCEsat double transistor Production
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5255PAPS-Q 55V, 2A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS5260PAP 60 V, 2 A PNP/PNP low V (BISS) transistor Production
PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor EndOfLife
Visit our documentation center for all documentation

Marcom graphics (1)
File name Title Type Date
DFN2020D-6_SOT1118D_mk.png plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28

Selection guide (1)
File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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Cross reference