Key features and benefits
- High performance in reduced board space
- High collector current gain hFE at high IC
- Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat (down to <30 mΩ)
- Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
- High collector current capability IC and ICM
Key applications
- Power switch for LAN and ADSL systems / medium power DC-to-DC conversion
- Inverter applications e.g. TFT displays
- Medium power peripheral drivers e.g. fan, motor
- Battery chargers / loadswitches
- Strobe flash units for digital still cameras and mobile phones
Parametric search
Products
Type number | Description | Status | Quick access |
---|---|---|---|
PBSS2515YPN-Q | 15 V low VCEsat NPN/PNP transistor | Production | |
PBSS4112PAN | 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4112PAN-Q | 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4112PANP-Q | 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor | Production | |
PBSS4130PAN | 30 V, 1 A NPN/NPN low VCEsat transistor | Production | |
PBSS4130PANP | 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor | Production | |
PBSS4140DPN-Q | 40 V low VCEsat NPN/PNP transistor | Production | |
PBSS4160DPN | 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor | Production | |
PBSS4160DS-Q | 60 V, 1 A NPN/NPN low VCEsat transistor | Production | |
PBSS4160PAN | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4160PANP-Q | 60 V, 1 A NPN/PNP low VCEsat transistor | Production | |
PBSS4160PANPS | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4160PANS | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4220PANS | 20 V, 2 A NPN/NPN low VCEsat BISS double transistor | Production | |
PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4230PANP | 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor | Production | |
PBSS4240DPN | 40 V low VCEsat NPN/PNP transistor | Production | |
PBSS4260PAN | 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor | Production | |
PBSS4260PANP | 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor | Production | |
PBSS4260PANPS | 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor | Production | |
PBSS4260PANS-Q | 60 V, 2 A NPN/NPN low VCEsat double transistor | Production | |
PBSS4350SPN | 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor | EndOfLife | |
PBSS4350SS | 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor | EndOfLife | |
PBSS5112PAP | 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | EndOfLife | |
PBSS5130PAP-Q | 30 V, 1 A PNP/PNP low VCEsat transistor | Production | |
PBSS5160DS-Q | 60 V, 1 A PNP/PNP low VCEsat transistor | Production | |
PBSS5160PAP | 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor | Production | |
PBSS5160PAPS | 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor | Production | |
PBSS5220PAPS-Q | 20V, 2 A PNP/PNP low VCEsat double transistor | Production | |
PBSS5230PAP | 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor | Production | |
PBSS5255PAPS-Q | 55V, 2A PNP/PNP low VCEsat (BISS) double transistor | Production | |
PBSS5260PAP | 60 V, 2 A PNP/PNP low V (BISS) transistor | Production | |
PBSS5260PAPS | 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor | Production | |
PBSS5350SS | 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor | EndOfLife |
Marcom graphics (1) |
|||
---|---|---|---|
File name | Title | Type | Date |
DFN2020D-6_SOT1118D_mk.png | plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
Selection guide (1) |
|||
File name | Title | Type | Date |
Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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