Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
---|---|---|---|---|
GAN063-650WSA | GAN063-650WSAQ | 934660022127 | SOT429 | Order product |
Discover Nexperia’s extensive portfolio of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs, IGBTs, and analog & logic ICs. Our components power virtually every electronic design worldwide - from automotive and industrial to mobile and consumer applications.
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Click here for more information650 V, 50 mΩ Gallium Nitride (GaN) FET
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability (800 V)
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
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GAN063-650WSA
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SOT429 | TO-247-3 | Not for design in | cascode | N | 1 | 650 | 60 | 175 | 34.5 | 4 | 15 | 143 | 125 | 3.9 | N | 1000 | 130 | 2019-11-17 |
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
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GAN063-650WSA
|
GAN063-650WSAQ (934660022127) |
Active | GAN063 650WSA |
TO-247-3 (SOT429) |
SOT429 | SOT429_127 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
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GAN063-650WSA
|
GAN063-650WSAQ | GAN063-650WSA |
File name | Title | Type | Date |
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GAN063-650WSA | 650 V, 50 mOhm Gallium Nitride (GaN) FET | Data sheet | 2020-07-31 |
AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
SOT429 | 3D model for products with SOT429 package | Design support | 2023-03-13 |
TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
SOT429 | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Package information | 2020-04-21 |
SOT429_127 | TO-247; Tube pack; Standard product orientation | Packing information | 2020-04-21 |
GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
File name | Title | Type | Date |
---|---|---|---|
GAN063-650WSA | GAN063-650WSA SPICE model | SPICE model | 2019-02-18 |
GAN063-650WSA_RC_thermal_Model | GAN063-650WSA RC thermal Model | Thermal design | 2019-02-18 |
GAN063-650WSA_Cauer | GAN063-650WSA Cauer thermal model | Thermal model | 2021-04-07 |
GaN063-650WSA | GaN041-650WSA Foster thermal model | Thermal model | 2021-04-02 |
SOT429 | 3D model for products with SOT429 package | Design support | 2023-03-13 |
Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
---|---|---|---|---|---|---|
GAN063-650WSA | GAN063-650WSAQ | 934660022127 | Active | SOT429_127 | 300 | Order product |
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.