Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

LFPAK56D MOSFETs

Packing even more into the Power-SO8 footprint the LFPAK56D fits two MOSFETs into one robust package without compromising on performance. Nexperia’s cutting edge copper clip technology allows for exceptional current handling, ultra low package resistance and supreme robustness and reliability. Perfect for situations where space is at a premium the LFPAK56D offers power performance. Offered for Automotive (AEC-Q101) and Industrial applications.

Features and benefits

  • Copper clip for low package inductance and resistance
  • High ID max rating up to 40 A per channel
  • Flexible leads for improved reliability
  • Exposed leads allow for easy optical inspection
  • Separate drain connections
  • High current transient robustness
  • Logic and standard level
  • AEC-Q101 qualified and industrial grades
  • Including the ASFETs for Repetitive Avalanche portfolios (Automotive and Industrial)
  • Including the LFPAK56D half-bridge portfolios for space constrained applications (Industrial and Automotive)

Applications

Automotive:

  • Engine management
  • ABS/ESP systems
  • Transmission control
  • Body control
  • LED lighting

Industrial:

  • Battery protection
  • Brushed motors drive
  • BLDC motor drive
  • DC/DC power supplies
  • Load switching
  • Automation
  • Fan drive
  • Printers

Featured products

PSMN6R1-40HL

PSMN6R1-40HL

N-Ch 40 V, 7.2 mΩ LL MOSFET in LFPAK56D
PSMN9R3-60HS

PSMN9R3-60HS

N-Ch 60 V, 9.3 mΩ SL MOSFET in LFPAK56D
PSMN025-100HS

PSMN025-100HS

N-Ch 100 V, 24.5 mΩ SL MOSFET in LFPAK56D

Featured documents

Using power MOSFETs in DC motor control applications

Using power MOSFETs in DC motor control applications

IAN50004
LFPAK MOSFET thermal design guide

LFPAK MOSFET thermal design guide

AN90003
Power MOSFET single-shot and repetitive avalanche ruggedness

Power MOSFET single-shot and repetitive avalanche ruggedness

AN10273

Latest news and blogs

  • Press release
Dec 9, 2020

Rugged AEC-Q101 MOSFETs from Nexperia offer ...
  • Blog article
Dec 7, 2020

How to save space, reduce component count and ...
Oct 10, 2017

Nexperia extends its leadership with the launch of ...
  • Blog article
Sep 25, 2017

LFPAK56D – taking the heat out of engine management ...

Latest videos

How to select a power MOSFET for your automotive repetitive avalanche application - Quick Learning

How to select a power MOSFET for your automotive repetitive ...
Four ways to control automotive solenoids/actuators using ...
PCB layout options for MOSFETs in low/medium power automotive ...

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LFPAK56D MOSFETs
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Products

Automotive qualified products (AEC-Q100/Q101)

Type number Description Status Quick access
BUK7K15-80E Dual N-channel 80 V, 15 mΩ standard level MOSFET Production
BUK7K13-60E Dual N-channel 60 V, 10 mΩ standard level MOSFET Production
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET Production
BUK9K18-40E Dual N-channel 40 V, 19.5 mΩ logic level MOSFET Production
BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET Production
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET Production
BUK7K25-40E Dual N-channel 40 V, 25 mΩ standard level MOSFET Production
BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET Production
BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET Production
BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET Production
BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET Production
BUK7K89-100E Dual N-channel 100 V, 82.5 mΩ standard level MOSFET Production
BUK7K35-60E Dual N-channel 60 V, 30 mΩ standard level MOSFET Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET Production
BUK9K5R6-30E Dual N-channel 30 V, 5.8 mΩ logic level MOSFET Production
BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K89-100E Dual N-channel TrenchMOS logic level FET Production
BUK7K32-100E Dual N-channel 100 V, 27.5 mΩ standard level MOSFET Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET Production
BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET Production
BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET Production
BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET Production
BUK9K13-60E Dual N-channel 60 V, 12.5 mΩ logic level MOSFET Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK7K45-100E Dual N-channel 100 V, 37.6 mΩ standard level MOSFET Production
BUK9K13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D Production
BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET Production
BUK9K22-80E Dual N-channel 80 V, 22 mΩ logic level MOSFET Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK7K5R6-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET Production
BUK7K23-80E Dual N-channel 80 V, 23 mΩ standard level MOSFET Production
BUK9K5R1-30E Dual N-channel 30 V, 5.3 mΩ logic level MOSFET Production
BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET Production
BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET Production
BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET Production
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Production
BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET Production
BUK9K45-100E Dual N-channel TrenchMOS logic level FET Production
BUK9K25-40E Dual N-channel 40 V, 29 mΩ logic level MOSFET Production
BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET Production
BUK9K29-100E Dual N-channel TrenchMOS logic level FET Production

MOSFETs

Type number Description Status Quick access
PSMN4R2-40VSH Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN013-40VLD Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN029-100HL N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN013-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN012-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche Production
PSMN6R8-40HS N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN8R0-40HL N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN014-60HS N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN028-100HS N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN013-60HS N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN033-100HL N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN045-100HL N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN6R1-40HL N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN025-100HS N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN038-100HS N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN9R3-60HS N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN011-60HL N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN8R5-40HS N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
BUK7K15-80E Dual N-channel 80 V, 15 mΩ standard level MOSFET Production
BUK7K13-60E Dual N-channel 60 V, 10 mΩ standard level MOSFET Production
BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET Production
BUK9K18-40E Dual N-channel 40 V, 19.5 mΩ logic level MOSFET Production
BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET Production
BUK7K29-100E Dual N-channel 100 V, 24.5 mΩ standard level MOSFET Production
BUK7K25-40E Dual N-channel 40 V, 25 mΩ standard level MOSFET Production
BUK7K17-80E Dual N-channel 80 V, 17 mΩ standard level MOSFET Production
BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET Production
BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET Production
BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET Production
BUK7K89-100E Dual N-channel 100 V, 82.5 mΩ standard level MOSFET Production
BUK7K35-60E Dual N-channel 60 V, 30 mΩ standard level MOSFET Production
BUK9K35-60RA Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET Production
BUK9K5R6-30E Dual N-channel 30 V, 5.8 mΩ logic level MOSFET Production
BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET Production
BUK9K13-60RA Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK9K89-100E Dual N-channel TrenchMOS logic level FET Production
BUK7K32-100E Dual N-channel 100 V, 27.5 mΩ standard level MOSFET Production
BUK9K25-40RA Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET Production
BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET Production
BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET Production
BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET Production
BUK9K13-60E Dual N-channel 60 V, 12.5 mΩ logic level MOSFET Production
BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
BUK7K45-100E Dual N-channel 100 V, 37.6 mΩ standard level MOSFET Production
BUK9K13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D Production
BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET Production
BUK9K22-80E Dual N-channel 80 V, 22 mΩ logic level MOSFET Production
BUK9K52-60RA Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Production
BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK7K5R6-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Production
BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET Production
BUK7K23-80E Dual N-channel 80 V, 23 mΩ standard level MOSFET Production
BUK9K5R1-30E Dual N-channel 30 V, 5.3 mΩ logic level MOSFET Production
PSMN014-40HLD N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology Production
BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET Production
BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET Production
BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET Production
BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Production
BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET Production
BUK9K45-100E Dual N-channel TrenchMOS logic level FET Production
BUK9K25-40E Dual N-channel 40 V, 29 mΩ logic level MOSFET Production
BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET Production
BUK9K29-100E Dual N-channel TrenchMOS logic level FET Production

Documentation

File name Title Type Date
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13
LFPAK56D_SOT669_mk.png plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT1205.step 3D model for products with SOT1205 package Design support 2017-06-30
nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708.pdf LFPAK56D the ultimate dual MOSFET Leaflet 2017-08-17
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
Nexperia_package_poster.pdf Nexperia package poster Leaflet 2020-05-15
AN50004.pdf Using power MOSFETs in DC motor control applications Application note 2021-03-02
AN50005.pdf Paralleling power MOSFETs in high power applications Application note 2021-09-13
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN90003.pdf LFPAK MOSFET thermal design guide Application note 2023-08-22
AN50003.pdf Driving solenoids in automotive applications Application note 2023-11-03
TN00008.pdf Power MOSFET frequently asked questions and answers Technical note 2024-08-09
vp_LFPAK56D.zip LFPAK56D MOSFETs Value proposition 2024-10-04
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28

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