Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

74AXP1G58GX

Low-power configurable multiple function gate

The 74AXP1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected directly to VCC or GND.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been discontinued

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.7 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

    • CDM JESD22-C101E exceeds 1000 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10% of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Multiple package options

  • Specified from -40 °C to +85 °C

Parametrics

Type number VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AXP1G58GX 0.7 - 2.75 CMOS ± 4.5 4.5 70 1 ultra low -40~85 X2SON6

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74AXP1G58GX 74AXP1G58GXZ
(935307129147)
Withdrawn / End-of-life RK SOT1255-2
X2SON6
(SOT1255-2)
SOT1255-2 SOT1255-2_147
74AXP1G58GXH
(935307129125)
Obsolete RK Not available

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74AXP1G58GX 74AXP1G58GXZ 74AXP1G58GX rohs rhf rhf
74AXP1G58GX 74AXP1G58GXH 74AXP1G58GX rohs rhf rhf
Quality and reliability disclaimer

Documentation (7)

File name Title Type Date
74AXP1G58 Low-power configurable multiple function gate Data sheet 2021-10-07
SOT1255-2 3D model for products with SOT1255-2 package Design support 2021-01-28
axp1g58 74AXP1G58 IBIS model IBIS model 2015-09-08
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
Nexperia_document_leaflet_Logic_X2SON_packages_062018 X2SON ultra-small 4, 5, 6 & 8-pin leadless packages Leaflet 2018-06-05
SOT1255-2 plastic thermal enhanced extremely thin small outline package; no leads;6 terminals; body 1.0 x 0.8 x 0.32 mm Package information 2020-08-27
74AXP1G58GX_Nexperia_Product_Reliability 74AXP1G58GX Nexperia Product Reliability Quality document 2022-05-04

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
axp1g58 74AXP1G58 IBIS model IBIS model 2015-09-08
SOT1255-2 3D model for products with SOT1255-2 package Design support 2021-01-28

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.