Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

ASFETs for Hotswap and Soft Start

Reliable linear mode, enhanced SOA and low RDS(on)

Whether it is in the cloud or at the edge, we truly live in a 24/7 world. So much of our daily lives depend on rack-based computers, communications and storage systems that are always-on. Ensuring these systems do not experience any power disruption and to protect the components on replacement boards when they are inserted into a live system, it is essential that in-rush current is carefully controlled.  In normal MOSFETs, strong SOA and low RDS(on) are mutually exclusive. Offering both capabilities in a single device, Nexperia’s specific MOSFETs for Hotswap and Soft Start are optimized for a non-stop world. 

ASFETs for Hotswap and Soft Start are designed specifically to support always-on applications and equipment:

  • MOSFETs with a strong linear mode performance and enhanced Safe Operating Area (SOA) are required to manage in-rush current effectively and reliably when capacitive loads are introduced to the backplane
  • Once a replacement board is safely powered up, the MOSFET is turned fully ON. In this mode of operation, a low RDS(on) value is of primary importance, helping to keep temperatures down and system efficiency at a maximum
  
    

Hot swap for communications infrastructure

 

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ASFETs for Hotswap and Soft Start
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Products

Type number Description Status Quick access
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R0-30YLE N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R1-30YLE N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R2-80ASE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R2-80CSE N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Qualification
PSMN1R4-100ASE N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMN1R4-100CSE N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R6-25YLE N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R1-30YLE N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R5-80SSE N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN3R4-30BLE N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN4R2-80YSE N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package EndOfLife
PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package EndOfLife
PSMN8R9-100BSE N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK Production
PSMNR56-25YLE N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR67-30YLE N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR82-30YLE N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR89-25YLE N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR90-80ASE N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Production
PSMNR98-25YLE N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
Visit our documentation center for all documentation

Application note (2)

File name Title Type Date
AN50006.pdf Power MOSFETs in linear mode Application note 2022-04-12
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Leaflet (4)

File name Title Type Date
nexperia_document_CCPAK-MOSFETs_2024_Chinese.pdf CCPAK MOSFET LEAFLET CN Leaflet 2024-12-02
nexperia_document_CCPAK_MOSFETs_2024.pdf Nexperia CCPAK MOSFETs Leaflet 2024-11-19
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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