Features and benefits
- Copper clip for low package inductance and resistance
- High ID max rating up to 40 A per channel
- Flexible leads for improved reliability
- Exposed leads allow for easy optical inspection
- Separate drain connections
- High current transient robustness
- Logic and standard level
- AEC-Q101 qualified and industrial grades
- Including the ASFETs for Repetitive Avalanche portfolios (Automotive and Industrial)
- Including the LFPAK56D half-bridge portfolios for space constrained applications (Industrial and Automotive)
Applications
Automotive:
- Engine management
- ABS/ESP systems
- Transmission control
- Body control
- LED lighting
Industrial:
- Battery protection
- Brushed motors drive
- BLDC motor drive
- DC/DC power supplies
- Load switching
- Automation
- Fan drive
- Printers
Featured products
Featured documents
Latest videos
How to select a power MOSFET for your automotive repetitive avalanche application - Quick Learning
Parametric search
Products
Automotive qualified products (AEC-Q100/Q101)
Type number | Description | Status | Quick access |
---|---|---|---|
BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | Production | |
BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | Production | |
BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | Production | |
BUK7K25-40E | Dual N-channel 40 V, 25 mΩ standard level MOSFET | Production | |
BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | Production | |
BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | Production | |
BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | Production | |
BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | Production | |
BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | Production | |
BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | Production | |
BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | Production | |
BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | Production | |
BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | Production | |
BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | Production | |
BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | Production | |
BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | Production | |
BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | Production | |
BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | Production | |
BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | Production | |
BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | Production | |
BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Production | |
BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | Production | |
BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | Production | |
BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | Production | |
BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | Production | |
BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK7K5R6-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | Production | |
BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | Production | |
BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | Production | |
BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | Production | |
BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | Production | |
BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | Production | |
BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | Production | |
BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | Production | |
BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | Production | |
BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | Production | |
BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | Production |
MOSFETs
Type number | Description | Status | Quick access |
---|---|---|---|
PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN013-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN029-100HL | N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN012-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche | Production | |
PSMN6R8-40HS | N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN011-60HL | N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN045-100HL | N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN033-100HL | N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN025-100HS | N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN038-100HS | N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN9R3-60HS | N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN6R1-40HL | N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN8R0-40HL | N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN014-60HS | N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN8R5-40HS | N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN028-100HS | N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN013-60HS | N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | Production | |
BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | Production | |
BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | Production | |
BUK7K25-40E | Dual N-channel 40 V, 25 mΩ standard level MOSFET | Production | |
BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | Production | |
BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | Production | |
BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | Production | |
BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | Production | |
BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | Production | |
BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | Production | |
BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | Production | |
BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | Production | |
BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | Production | |
BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | Production | |
BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | Production | |
BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | Production | |
BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | Production | |
BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | Production | |
BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | Production | |
BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | Production | |
BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | Production | |
BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | Production | |
BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | Production | |
BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | Production | |
BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | Production | |
BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK7K5R6-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | Production | |
BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | Production | |
BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | Production | |
BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | Production | |
BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | Production | |
BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | Production | |
PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | Production | |
BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | Production | |
BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | Production | |
BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | Production | |
BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | Production | |
BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | Production | |
BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | Production | |
BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | Production | |
BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | Production |
Documentation
File name | Title | Type | Date |
---|---|---|---|
AN11599.pdf | Using power MOSFETs in parallel | Application note | 2016-07-13 |
LFPAK56D_SOT669_mk.png | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT1205.step | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708.pdf | LFPAK56D the ultimate dual MOSFET | Leaflet | 2017-08-17 |
AN11243.pdf | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
Nexperia_package_poster.pdf | Nexperia package poster | Leaflet | 2020-05-15 |
AN50004.pdf | Using power MOSFETs in DC motor control applications | Application note | 2021-03-02 |
AN50005.pdf | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
AN10273.pdf | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN90003.pdf | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
AN50003.pdf | Driving solenoids in automotive applications | Application note | 2023-11-03 |
TN00008.pdf | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
vp_LFPAK56D.zip | LFPAK56D MOSFETs | Value proposition | 2024-10-04 |
AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
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