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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

74AVC32T245EC

32-bit dual supply translating transceiver with configurable voltage translation; 3-state

The 74AVC32T245 is a 32-bit transceiver with bidirectional level voltage translation and 3-state outputs. The device can be used as eight 8-bit input-output ports (nAn and nBn), two 16-bit transceiver or as a 32-bit transceiver. It has dual supplies (VCC(A) and VCC(B)) for voltage translation and four 8-bit input-output ports (nAn and nBn) each with its own output enable (nOE) and send/receive (nDIR) input for direction control. VCC(A) and VCC(B) can be independently supplied at any voltage between 0.8 V and 3.6 V making the device suitable for low voltage translation between any of the following voltages: 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V. A HIGH on nDIR selects transmission from nAn to nBn while a LOW on nDIR selects transmission from nBn to nAn. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state.

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both nAn and nBn are in the high-impedance OFF-state.

This product has been discontinued

Features and benefits

  • Wide supply voltage range:
    • VCC(A): 0.8 V to 3.6 V
    • VCC(B): 0.8 V to 3.6 V
  • Complies with JEDEC standards:
    • JESD8-12 (0.8 V to 1.3 V)
    • JESD8-11 (0.9 V to 1.65 V)
    • JESD8-7 (1.2 V to 1.95 V)
    • JESD8-5 (1.8 V to 2.7 V)
    • JESD8-B (2.7 V to 3.6 V)
  • ESD protection:
    • HBM JESD22-A114F Class 3B exceeds 8000 V
    • MM JESD22-A115-A exceeds 200 V
    • CDM JESD22-C101D exceeds 1000 V
  • Maximum data rates:
    • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)
    • 200 Mbit/s (≥ 1.1 V to 3.3 V translation)
    • 200 Mbit/s (≥ 1.1 V to 2.5 V translation)
    • 200 Mbit/s (≥ 1.1 V to 1.8 V translation)
    • 150 Mbit/s (≥ 1.1 V to 1.5 V translation)
    • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)
  • Suspend mode
  • Latch-up performance exceeds 100 mA per JESD 78 Class II
  • Inputs accept voltages up to 3.6 V
  • IOFF circuitry provides partial Power-down mode operation
  • Multiple package options
  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Applications

    Parametrics

    Type number Package name
    74AVC32T245EC LFBGA96

    Package

    All type numbers in the table below are discontinued.

    Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
    74AVC32T245EC 74AVC32T245ECE
    (935284599551)
    Obsolete VC32T245 Standard Procedure Standard Procedure no package information
    74AVC32T245ECK
    (935284599557)
    Obsolete VC32T245 Standard Procedure Standard Procedure

    Environmental information

    All type numbers in the table below are discontinued.

    Type number Orderable part number Chemical content RoHS RHF-indicator
    74AVC32T245EC 74AVC32T245ECE 74AVC32T245EC rhf
    74AVC32T245EC 74AVC32T245ECK 74AVC32T245EC rhf
    Quality and reliability disclaimer

    Documentation (4)

    File name Title Type Date
    74AVC32T245 32-bit dual supply translating transceiver with configurable voltage translation; 3-state Data sheet 2017-05-03
    AN90007 Pin FMEA for AVC family Application note 2018-11-30
    Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
    avc32t245 AVC32T245 IBIS model IBIS model 2013-05-01

    Support

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    Models

    File name Title Type Date
    avc32t245 AVC32T245 IBIS model IBIS model 2013-05-01

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.