SiC double-pulse half-bridge evaluation board - NEVB-HB-NSFD7-A
The SiC half-bridge evaluation board facilitates double-pulse testing of SiC MOSFETs in a bottom-side cooled package (TO-263-7). The device has been designed with low inductance in mind and incorporates a high-bandwidth current shunt, allowing for the evaluation of switching performance with optimal precision. Moreover, it can be employed for thermal investigations and continuous operation at several kilowatts.
NEVB-HB-NSFD7-A
Key features & benefits
The evaluation board circuit comprises a half-bridge circuit featuring two SiC MOSFET´s.
The SiC MOSFET´s used are 60mOhm TO-263-7 (NSF060120D7A0) with leading RDSon stability up to 175°C, optimized in all areas to achieve highest efficiency and figure of merit.
Key features of NEVB-HB-NSFD7-A include:
- Designed to be simple
- Optimal precision
- Operation at several kilowatts
- Employed for thermal investigations and continuous operation
- Half-bridge is capable of bidirectional operation
Key applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
Products on the board (4)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
NSF030120D7A0 | 1200 V, 30 mΩ, N-channel SiC MOSFET | Production | |
|
|
NSF060120D7A0 | 1200 V, 60 mΩ N-channel SiC MOSFET | Production | |
|
|
NSF080120D7A0 | 1200 V, 80 mΩ N-channel SiC MOSFET | Production | |
|
|
NSF040120D7A0 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Production |
Products on the board (4)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
NSF030120D7A0 | 1200 V, 30 mΩ, N-channel SiC MOSFET | Production | |
|
|
NSF060120D7A0 | 1200 V, 60 mΩ N-channel SiC MOSFET | Production | |
|
|
NSF080120D7A0 | 1200 V, 80 mΩ N-channel SiC MOSFET | Production | |
|
|
NSF040120D7A0 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Production |
Documentation (0)
No documents available
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